Silicon controlled rectifier structure with improved junction breakdown and leakage control

ABSTRACT

Device structures and design structures for a silicon controlled rectifier, as well as methods for fabricating a silicon controlled rectifier. The device structure includes first and second layers of different materials disposed on a top surface of a device region containing first and second p-n junctions of the silicon controlled rectifier. The first layer is laterally positioned on the top surface in vertical alignment with the first p-n junction. The second layer is laterally positioned on the top surface of the device region in vertical alignment with the second p-n junction. The material comprising the second layer has a higher electrical resistivity than the material comprising the first layer.

BACKGROUND

The present invention relates to semiconductor device fabrication and,more specifically, to device structures and design structures for asilicon controlled rectifier, as well as methods for fabricating asilicon controlled rectifier.

Chips with complementary metal-oxide-semiconductor (CMOS) devices may beexposed to electrostatic discharge (ESD) events, which can lead topotentially large and damaging ESD currents within the integratedcircuit. Shrinking device dimensions have increased the susceptibilityof integrated circuits to ESD events. Precautions may be taken bymanufacturers, assemblers, and users of integrated circuits to avoidcausing ESD events such as incorporating ESD prevention into theintegrated circuit. The ESD protection device may prevent damage to thechip during post-manufacture handling until installation on a circuitboard and even while the chip is installed on the circuit board. In theabsence of an ESD event, the ESD protection device maintains ahigh-impedance, non-conductive state and is electrically isolated fromthe protected integrated circuit. If an ESD event is detected, the ESDprotection device is configured to change to a low-impedance, conductivestate to direct the ESD current to ground and away from the sensitiveinternal circuits of the chip. The ESD protection device is configuredto maintain the conductive state until the ESD current is drained andthe ESD voltage is discharged to an acceptable level.

One common type of ESD protection device is a silicon controlledrectifier (SCR), which offers both low capacitance and high failurecurrents. A silicon controlled rectifier may be constructed in CMOStechnologies to provide ESD protection in integrated circuits thatinclude inverters or other logic gates. A silicon controlled rectifieris characterized by a trigger voltage/current and a holdingvoltage/current, which determine the device responsiveness andeffectiveness during an ESD event.

Improved device structures, fabrication methods, and design structuresare needed for a silicon controlled rectifier.

SUMMARY

According to one embodiment of the present invention, a device structureis formed using a device region of semiconductor material. The devicestructure includes a silicon controlled rectifier with a first p-njunction and a second p-n junction each in the device region, a firstlayer on a top surface of the device region, and a second layer on thetop surface of the device region. The first layer is laterallypositioned on the top surface of the device region in vertical alignmentwith the first p-n junction. The second layer is laterally positioned onthe top surface of the device region in vertical alignment with thesecond p-n junction. The first layer is comprised of a first materialand the second layer is comprised of a second material with a higherelectrical resistivity than the first material.

According to another embodiment of the present invention, a method isprovided for fabricating a device structure that includes a siliconcontrolled rectifier formed in a device region. The method includesforming a section of a first layer on a top surface of the device regionand laterally positioned on the top surface in vertical alignment with afirst p-n junction of the silicon controlled rectifier, and forming asection of a second layer on the top surface of the device region andlaterally positioned on the top surface in vertical alignment with asecond p-n junction of the silicon controlled rectifier. The first layeris comprised of a first material and the second layer is comprised of asecond material with a higher electrical resistivity than the firstmaterial.

According to another embodiment of the present invention, a designstructure is provided that is readable by a machine used in design,manufacture, or simulation of an integrated circuit. The designstructure includes a silicon controlled rectifier with a first p-njunction and a second p-n junction each in a device region. The designstructure further includes first and second layers on a top surface ofthe device region. The first layer is laterally positioned on the topsurface of a device region in vertical alignment with the first p-njunction. The second layer is laterally positioned on the top surface ofthe device region in vertical alignment with the second p-n junction.The first layer is comprised of a first material and the second layer iscomprised of a second material with a higher electrical resistivity thanthe first material. The design structure may comprise a netlist. Thedesign structure may also reside on storage medium as a data format usedfor the exchange of layout data of integrated circuits. The designstructure may reside in a programmable gate array.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of this specification, illustrate various embodiments of theinvention and, together with a general description of the inventiongiven above and the detailed description of the embodiments given below,serve to explain the embodiments of the invention.

FIG. 1A is a top view of a portion of a substrate at an initialfabrication stage of a processing method in accordance with anembodiment of the invention.

FIG. 1B is a cross-sectional view taken generally along line 1B-1B inFIG. 1A.

FIGS. 2A-4A and 2B-4B are respective top and cross-sectional views ofthe portion of the substrate of FIGS. 1A, 1B at successive subsequentfabrication stages of the processing method.

FIG. 5 is a schematic view of the electrical configuration of the devicestructure of FIGS. 4A, 4B.

FIG. 6 is a cross-sectional view similar to FIG. 4B of a devicestructure constructed in accordance with an alternative embodiment ofthe invention.

FIG. 7 is a flow diagram of a design process used in semiconductordesign, manufacture, and/or test.

DETAILED DESCRIPTION

With reference to FIGS. 1A, 1B and in accordance with an embodiment ofthe invention, a device structure 10 for a controlled rectifier (SCR) 11includes a plurality of doped regions 12, 14, 16, 18 arranged in afour-layer structure and doped to exhibit alternating conductivitytypes, specifically n-type conductivity and p-type conductivity. Asexplained below, the SCR 11 may be used in an ESD protection circuit.

The device structure 10 is formed using a substrate, which may be anysuitable substrate containing a semiconductor material that a personhaving ordinary skill in the art would recognize as suitable for thefabrication of an integrated circuit. In the representative embodiment,the substrate may be a semiconductor-on-insulator (SOI) substrate thatincludes a handle wafer 20, a device or SOI layer 22, and a burieddielectric layer 24 comprised of an insulating material. The burieddielectric layer 24 may be a buried oxide layer containing silicondioxide (e.g., SiO₂). The SOI layer 22 is separated from the handlewafer by the intervening buried dielectric layer 24 and is in directcontact along a planar interface with a top surface 25 of the burieddielectric layer 24. The handle wafer 20 and SOI layer 22 may becomprised of single crystal or monocrystalline semiconductor material,such as single crystal silicon or another semiconductor material thatcontains primarily silicon. The buried dielectric layer 24 electricallyinsulates the handle wafer 20 from the SOI layer 22, which isconsiderably thinner than the handle wafer 20. The SOI substrate may befabricated by any suitable conventional technique, such as wafer bondingtechniques or separation by implantation of oxygen (SIMOX) techniques,familiar to a person having ordinary skill in the art.

Isolation regions 26 are defined by a conventional process in the SOIlayer 22 and extend from a top surface 23 of SOI layer 22 to the topsurface 25 of the buried dielectric layer 24. In one embodiment, theisolation regions 26 may be fabricated by a shallow trench isolation(STI) process that relies on a conventional lithography and etchingprocess. The STI process may include formation of a patterned hardmask(not shown) on the top surface 23 of SOI layer 22, followed by reactiveion etching (RIE) to form trenches by etching through the SOI layer 22to the depth of the buried dielectric layer 24. The hardmask may then beremoved from the SOI layer 22 using an etching process. The trenches andvias are filled with portions of a blanket layer of a dielectricmaterial. The dielectric material comprising the isolation regions 26may be an oxide, such as densified tetraethylorthosilicate (TEOS)deposited by thermal chemical vapor deposition (CVD) or a high-densityplasma (HDP) oxide deposited with plasma assistance. A polishingprocess, such as chemical mechanical polishing (CMP), is employed toremove excess dielectric material from the top surface 23 of the SOIlayer 22. After planarization, the residual dielectric material disposedinside the trenches defines the isolation regions 26 that bound a deviceregion 28 of the SOI layer 22.

Doped region 14 is formed as a well within the device region 28 and iscomprised of semiconductor material of the SOI layer 22 doped to have afirst conductivity type. When formed, the doped region 14 may extendbetween the isolation regions 26 across the full width of the deviceregion 28 or only partially across the device region 28.

Doped region 14 may be formed by forming a patterned ion-implantationmask (not shown) on the top surface 23 of the SOI layer 22 andimplanting ions of an impurity species into the device region 28. Theion-implantation mask controls dopant introduction into device region 28during implantation. The ion-implantation mask may be a resist layerhaving a window aligned with the device region 28 and may be formed inthe ion-implantation mask using a photolithographic patterning process.The implantation conditions (e.g., kinetic energy and dose) for formingthe doped region 14 are selected to provide a desired dopantconcentration (e.g., light doping) and may include multiple implantationconditions. In a representative embodiment, the doped region 14 may bean n-well comprised of semiconductor material with n-type conductivityformed by implanting ions of a dopant such as phosphorus (P), arsenic(As), antimony (Sb), or other suitable n-type dopant. After ionimplantation is complete, the ion-implantation mask is removed by, forexample, oxygen plasma ashing or wet chemical stripping.

Doped region 16 is formed as a well within the device region 28 and iscomprised of semiconductor material of the SOI layer 22 doped to have asecond conductivity type opposite to the first conductivity type. Whenformed, the doped region 16 may extend only partially across the deviceregion 28 and, depending on the lateral extent of doped region 14, maycounterdope a portion of the doped region 14 to provide the oppositeconductivity type.

Doped region 16 may be formed forming a patterned ion-implantation mask(not shown) on the top surface 23 of the SOI layer 22 and implantingions of an impurity species into the device region 28. Theion-implantation mask may be a resist layer having a window aligned withthe intended location for doped region 16 and may be formed in theion-implantation mask using a photolithographic patterning process. Theimplantation conditions for forming doped region 16 are selected toprovide a desired dopant concentration (e.g., light doping) and mayinclude multiple implantation conditions. In a representativeembodiment, the doped region 16 may be a p-well comprised ofsemiconductor material with p-type conductivity formed by implantingions of a dopant such as boron (B), aluminum (Al), gallium (Ga), or anyother suitable p-type dopant. After ion implantation is complete, theion-implantation mask is removed

Doped regions 12, 30 may also be formed in the device region 28following the formation of doped regions 14, 16. Doped regions 12, 30are each comprised of semiconductor material of the device region dopedto have the first conductivity type. Doped region 12, which is disposedin the doped region 14, has an opposite conductivity type than dopedregion 14. Doped region 30, which is laterally disposed within theboundaries of doped region 16, has the same conductivity type as dopedregion 16 and a higher impurity concentration. Each of the doped regions12, 30 may have a higher impurity concentration and a higher electricalconductivity (i.e., lower electrical resistivity) than the doped region16.

In the representative embodiment, the doped regions 12, 30 may beconcurrently formed with a shared ion implantation process and using thesame ion-implantation mask. The ion implantation process forming dopedregions 12, 30 may include forming a patterned ion-implantation mask(not shown) on the SOI layer 22 and implanting ions of an impurityspecies. The ion-implantation mask may be a resist layer having windowsaligned with the intended locations for the doped regions 12, 30 and maybe formed in the ion-implantation mask using a photolithographicpatterning process. The implantation conditions for forming dopedregions 12, 30 are selected to provide a desired dopant concentrationand may include multiple implantation conditions. In one embodiment, thedoped regions 12, 30 may be provided with p-type conductivity byimplanting ions of a suitable p-type dopant. After ion implantation iscomplete, the ion-implantation mask is removed.

Doped regions 18, 32 may also be formed within the device region 28following the formation of doped regions 14, 16 and either before orafter the formation of doped regions 12, 30. Doped regions 18, 32 areeach comprised of semiconductor material of the device region 28 dopedto have the second conductivity type. Doped region 18, which is disposedin the doped region 16, has an opposite conductivity type than dopedregion 16. Doped region 32, which is laterally disposed within theboundaries of doped region 14, has the same conductivity type as dopedregion 14 and a higher impurity concentration. Each of the doped regions18, 32 may have a higher impurity concentration and a higher electricalconductivity (i.e., lower electrical resistivity) than the doped region14.

In the representative embodiment, the doped regions 18, 32 may beconcurrently formed with a shared ion implantation process. The ionimplantation process forming doped regions 18, 32 may include forming apatterned ion-implantation mask (not shown) on the SOI layer 22 andimplanting ions of an impurity species. The ion-implantation mask may bea resist layer having windows aligned with the intended locations forthe doped regions 18, 32 and may be formed in the ion-implantation maskusing a photolithographic patterning process. The implantationconditions for forming doped regions 18, 32 are selected to provide adesired dopant concentration and may include multiple implantationconditions. In a representative embodiment, the doped regions 18, 32 maybe provided with p-type conductivity by implanting ions of a suitablep-type dopant. After ion implantation is complete, the ion-implantationmask is removed.

The doped regions 12, 14 define a p-n junction 34 along their verticalplane of intersection across which the conductivity type changes. Thedoped regions 14, 16 define a p-n junction 36 along their vertical planeof intersection across which the conductivity type changes. The dopedregions 16, 18 define a p-n junction 38 along their vertical plane ofintersection across which the conductivity type changes. The presence ofthe three p-n junctions 34, 36, 38 is characteristic of a constructionfor a silicon controlled rectifier like SCR 11. In the representativeembodiment, the SCR 11 has a lateral device construction in which thep-n junctions 34, 36, 38 represent boundary interfaces between regionsof opposite conductivity type that are vertically oriented relative tothe top surface 23 of the SOI layer 22, the doped region 12 defines acathode of the SCR 11, and the doped region 18 defines an anode of theSCR 11. In the representative embodiment, the SCR 11 is an NPNP layeredstructure.

The doped regions 12, 14, 16, 18, 30, 32 may extend vertically in depthfrom the top surface 23 of the SOI layer 22 to the planar interfacebetween the bottom surface of the SOI layer 22 and the top surface 25 ofburied dielectric layer 24. An anneal, such as a rapid thermal anneal,may be employed to electrically activate the implanted impurity speciesand to alleviate any implantation damage in doped regions 12, 14, 16,18, 30, 32. Doping mechanisms to modify the electrical conductivity ofsemiconductor materials by the controlled introduction of impuritiesinto their crystal lattice are understood by a person having ordinaryskill in the art.

The doped region 30 provides a body contact, which in the representativeembodiment is an n-body contact. The doped region 32 provides a bodycontact, which in the representative embodiment is a p-body contact. Aportion of doped region 14 may separate the doped regions 12, 32. Aportion of doped region 16 may separate the doped regions 18, 30. Dopedregion 30 is laterally positioned between doped region 18 and one of theisolation regions 26 in device structure 10. Doped region 32 islaterally positioned between doped region 12 and another of theisolation regions 26 in device structure 10.

With reference to FIGS. 2A, 2B in which like reference numerals refer tolike features in FIGS. 1A, 1B and at a subsequent fabrication stage, thedevice structure 10 further includes layers 41, 42 deposited on the topsurface 23 of SOI layer 22 and patterned using photolithography andetching (e.g., RIE). Layer 41 is in direct contact with the top surface23 of the SOI layer 22. Gaps 46, 48, 50, 52, 54 are defined in thelayers 41, 42 by the patterning process. A surface area of the topsurface 23 of the SOI layer 22 is exposed in each of the gaps 46, 48,50, 52, 54. Layer 42 may have a significantly larger thickness (e.g.,twice the thickness or thicker) than layer 41 and a higher electricalconductivity than layer 41. In an alternative embodiment, layer 41 maybe omitted from the device construction.

A section 43 of layers 41, 42 is disposed over the p-n junction 34. Thesection 43 has an edge 53 that borders gap 48 and another edge 55 thatborders gap 50 so that the width of section 43 is measured by thedistance between the edges 53, 55. Section 43 is laterally positioned onthe top surface 23 of SOI layer 22 in vertical alignment with the p-njunction 36 so that p-n junction 36 is laterally positioned between theedges 53, 55. Section 43 is laterally disposed in part on one side ofthe p-n junction 34 and in part on an opposite side of the p-n junction34, but does not extend horizontally to vertically overlie the p-njunction 38. However, section 43 of layers 41, 42 is not verticallyaligned with the p-n junction 36.

A section 44 of layers 41, 42 is disposed over the p-n junction 38. Thesection 44 of the layers 41, 42 has an edge 57 that borders gap 50 andanother edge 59 borders bounds gap 52 so that the width of section 44 ismeasured by the distance between the edges 57, 59. Section 44 islaterally positioned on the top surface 23 of SOI layer 22 in verticalalignment with the p-n junction 38 and with p-n junction 38 laterallypositioned between the edges 57, 59. Section 44 is laterally disposed inpart on one side of the p-n junction 38 and in part on an opposite sideof the p-n junction 38. However, section 44 of layers 41, 42 is notvertically aligned with the p-n junction 36.

Sections 45, 47 of the layers 41, 42 are also formed on the top surface23 when the layers 41, 42 are patterned to form sections 43, 44.Sections 43, 44 are laterally positioned between section 45 and section47. Gap 50 is disposed between sections 43, 44 of the layers 41, 42 and,more specifically, extends laterally between edge 57 of section 44 andedge 55 of section 43. However, as described above, the locations of theedges 55, 57 are selected such that the p-n junction 36 is notvertically aligned with either of the sections 43, 44 of layer 42 but isinstead vertically aligned with the section 60 of layer 56.

In one embodiment, the layers 41, 42 may be formed by complementarymetal-oxide-semiconductor (CMOS) processing steps during fabrication ofCMOS gate structures at other locations on the SOI substrate. Inparticular, layers 41, 42 may be comprised of a portion of the gatedielectric and the gate conductor of a CMOS gate stack formed on the topsurface 23 and patterned using photolithography and etching. Layer 41may be comprised of an insulating material (e.g., a non-conductor)appropriate for use in a CMOS gate stack. In one embodiment, the layer41 may be comprised of an oxide or oxynitride of silicon (e.g., SiO₂).If composed of oxide, layer 41 may be a high quality oxide grown by athermal oxidation process, such as a dry thermal oxidation process usingoxygen as the oxidation gas. The insulating material of layer 41 may bealso deposited by CVD, atomic layer deposition (ALD), or anotherconventional deposition technique.

Layer 42 may include one or more layers comprised of a conductor, suchas doped polycrystalline silicon (polysilicon) and/or a metal. In oneembodiment, layer 42 is comprised of doped polysilicon. In variousalternative embodiments, layer 42 may be comprised of tungsten (W),tantalum (Ta), titanium nitride (TiN), zirconium nitride (ZrN), hafniumnitride (HfN), vanadium nitride (VN), niobium nitride (NbN), tantalumnitride (TaN), tungsten nitride (WN), titanium aluminum nitride (TiA1N),tantalum carbide (TaC), tantalum magnesium carbide (TaMgC), tantalumcarbonitride (TaCN), a combination or an alloy thereof, or analogousmaterials recognized by a person having ordinary skill in the art. Layer42 may be deposited by CVD, ALD, physical vapor deposition (PVD), etc.

With reference to FIGS. 3A, 3B in which like reference numerals refer tolike features in FIGS. 2A, 2B and at a subsequent fabrication stage, thedevice structure 10 further includes a layer 56 of a material that isdeposited on the top surface 23 of SOI layer 22 and over the layers 41,42 at locations for which a section of layers 41, 42 is covering the topsurface 23. After the layer 56 is deposited, a resist layer 58 comprisedof a radiation-sensitive organic material is applied by spin coating,pre-baked, exposed to radiation to impart a latent image of a patternthat retains the layer 56 only over the intended surface area correlatedwith the p-n junction 38 and gap 50 in layers 41, 42, baked, and thendeveloped with a chemical developer. Procedures for applying andlithographically patterning the resist layer 58 using a photomask andlithography tool are known to a person having ordinary skill in the art.

Layer 56 is comprised of a second material different in composition fromthe first material comprising layer 42 and that has a higher dielectricconstant and lower electrical conductivity than the first materialcomprising layer 42. In one embodiment, layer 56 may be comprised of alayer of a dielectric material that is non-conductive and electricallyinsulating and, in particular, may be comprised of an oxide, nitride, oroxynitride of silicon. In a representative embodiment, the dielectricmaterial in layer 56 may be comprised of silicon nitride (Si₃N₄) ornon-stoichiometric silicon nitride (Si_(x)N_(y)) that is deposited byCVD or PVD. Layer 56 may be composed of a material that is used in aCMOS process as a silicide blocking layer.

With reference to FIGS. 4A, 4B in which like reference numerals refer tolike features in FIGS. 3A, 3B and at a subsequent fabrication stage,layer 56 is patterned using the resist layer 58 as an etch mask. A dryetching process, such as RIE, may be used to remove layer 56 fromsurface areas unmasked by the resist layer 58. A section 60 of layer 56remains following the patterning. Section 60 of layer 56 directlycontacts the top surface 23 of the SOI layer 22. The resist layer 58 issubsequently removed by oxygen plasma ashing or wet chemical stripping.

In the representative embodiment, section 60 of layer 56 has an edge 61that is coextensive with the edge 55 of the section 43 of layers 41, 42and an edge 63 that is coextensive with the edge 57 of the section 44 oflayers 41, 42. Section 60 has a width that is measured by the distancebetween the edges 61, 63 and the p-n-junction 36 is laterally positionedbetween the edges 61, 63 of section 60. Section 60 of layer 56 islaterally positioned on the top surface 23 of SOI layer 22 in verticalalignment with the p-n junction 36 and, in the representativeembodiment, fully occupies the gap 50 between the sections 43, 44 oflayers 41, 42. As a result, layer 56 partially overlaps the sections 43,44 of layers 41, 42 so that the edges 55, 57 are covered. However, theembodiments of the invention are not so limited as the section 60 may benarrower in width than gap 50 so that one or both of the edges 55, 57 isuncovered and separated from the respective one of the edges 61, 63 ofsection 60.

Due to at least in part to the presence of the sections 43, 44 afterlayer 56 is deposited and patterned, layer 56 and, in particular,section 60 of layer 56 does not directly overlie the p-n junctions 34,38. At the least and contingent on the width of section 60, sections 43,44 of layers 41, 42 represent intervening structures between layer 56and the top surface 23 of the SOI layer 22. In one embodiment, the widthof section 60 is selected such that no portion of section 60 overlieseither of the p-n junctions 34, 38.

Standard back-end-of-line (BEOL) processing follows the formation of thedevice structure 10 to form a BEOL interconnect structure. Each level ofthe BEOL interconnect structure may be fabricated by damasceneprocesses, such as a dual damascene process in which a dielectric layeris deposited, vias and trenches are etched in the dielectric layer, andthe vias and trenches are filled with a conductor using a single blanketdeposition followed by planarization. The damascene process isreplicated to stack multiple wiring levels so that a multi-level, highdensity framework of conductive interconnections is formed. Damasceneprocesses and materials used in damascene processes are understood by aperson having ordinary skill in the art.

Silicide (not shown) may be formed on surface areas of the top surface23 of the SOI layer exposed by the gaps 46, 48, 52, 54 and contacts 62,64, 66, 68 to the silicided surface areas may be formed during the BEOLprocessing. In particular, contact 64 may be coupled with doped region12, which represents the cathode of the SCR 11, and contact 66 may becoupled with doped region 18, which represents the anode of the SCR 11.Contacts 66, 68 are coupled with the doped regions 30, 32 of oppositeconductivity type to provide respective well contacts.

With reference to FIG. 5, the SCR 11 (FIGS. 4A, 4B) includes a parasiticPNP bipolar transistor 70 and a parasitic NPN bipolar transistor 72 thatare cross-coupled. In the representative embodiment, the PNP bipolartransistor 70 comprises the doped region 18 with heavily-doped p-typeconductivity, the doped region 16 with lightly-doped n-typeconductivity, and the doped region 14 with lightly-doped p-typeconductivity. The NPN bipolar transistor 72 is comprised by the dopedregion 12 with heavily-doped n-type conductivity, the doped region 14with lightly-doped p-type conductivity, and the doped region 16 withlightly-doped n-type conductivity. A collector region of the PNP bipolartransistor 70 and a base region of the NPN bipolar transistor 72 arecollectively represented by the doped region 14. A base region of thePNP bipolar transistor 70 and a collector region of the NPN bipolartransistor 72 are collectively represented by the doped region 16. Dopedregion 12 operates as the emitter of the NPN bipolar transistor 72 and,as mentioned above, serves as the cathode 74 of the SCR 11. Doped region18 operates as the emitter of the PNP bipolar transistor 70 and, as alsomentioned above, serves as the anode 76 of the SCR 11.

The SCR 11 may be used to provide ESD protection to the devices of theprotected circuit 78 comprising one or more integrated circuitsfabricated as a chip on the SOI substrate. To that end, the SCR 11 andthe protected circuit 78 are electrically coupled by a shared signalpath to the I/O pad 80. More specifically, the anode 76 of the SCR 11 iscoupled with the I/O pad 80 and the protected circuit and the cathode 74of the SCR 11 is coupled to the ground buss at a ground pad 82. Theground pad 82 is grounded when the protected circuit 78 is not powered.The SCR 11 may provide a low-impedance current-carrying path from theI/O pad 80 to the ground pad 82 for the current of an ESD event and,thereby, diverts the current of the ESD event from reaching and damagingthe protected circuit 78. The current from the ESD event is directedthrough the current-carrying path that includes the doped regions 12,14, 16, 18 of the SCR 11.

In the representative embodiment, the SCR 11 is triggered to dischargethe ESD current from a positive mode ESD event at the I/O pad 80 to theground pad 82. During the positive mode ESD event, the PNP bipolartransistor 70 turns on and the collector current of the PNP bipolartransistor 70 raises the potential of SOI layer 22. In response to thepotential of SOI layer 22 reaching approximately 0.7 volts, the NPNbipolar transistor 72 turns on. If the product of the current gains forthe bipolar transistors 70, 72 exceeds unity, then the turn-on conditionis sustained so that the SCR 11 is latched in the low impedance stateand directs the ESD current from the I/O pad 80 through the SCR 11 tothe ground buss at ground pad 82. When the chip is in a poweredcondition during normal operation, the SCR 11 will present a highimpedance between the I/O pad 80 and the ground buss at ground pad 82 sothat signals communicated over the signal path between the I/O pad 80and integrated circuit(s) 78 may be relatively unaffected by thepresence of the SCR 11.

Doped regions 14, 16 are respectively characterized by electricalresistances 84, 86. The electrical resistance 84 of the doped region 16is coupled in series with a voltage trigger network, such as a diodestring 88, characterized by a triggering voltage and a triggeringcurrent that induces the SCR 11 to enter the low impedance state.

The device structure 10 that combines layers 42, 56 of differentmaterial characteristics causes the SCR 11 to exhibit improved junctionbreakdown and leakage control. The section 60 of layer 56, which iscomprised of a material having a higher electrical resistivity than thematerial comprising layer 42, is disposed over p-n junction 38 andoperates to reduce or eliminate parasitic leakage at the p-n junction38. The difference in electrical resistivity between the layers 42, 56may be at least five orders of magnitude. For example, if layer 56 iscomprised of Si₃N₄ and layer 42 is comprised of Si, the DC electricalresistivity at 25° C. is approximately 10¹⁴ ohm-cm and the intrinsicelectrical resistivity of silicon is 2.3×10⁵ ohm-cm, which is loweredfurther by impurity doping.

Because at least in part of the lower electrical resistivity of layer 42in comparison with layer 56, the p-n junctions 34, 38 exhibit a lowerleakage current than p-n junction 36. The p-n junctions 34, 38 may alsoexhibit a higher breakdown voltage than p-n junction 36 primarily due tothe presence of layer 41 at the interface between layer 42 and the SOIlayer 22. As an example, if layer 41 is comprised of silicon dioxide,the ability to grow layer 41 using a high quality thermal oxidationprocess may enhance the breakdown voltage for p-n junctions 34, 38 incomparison with p-n junction 36 capped by the section 60 of layer 56that is formed by a deposition process (e.g., a nitride depositionprocess if layer 56 is comprised of silicon nitride). In contrast, theuse of section 60 of the deposited layer 56 over p-n junction 36 mayreduce the parasitic channel leakage in comparison with p-n junctions34, 38. As a result, the difference in the selection of materials forlayers 41, 42 and layer 56 may be used to engineer the properties of thep-n junctions 34, 38.

With reference to FIG. 6 in which like reference numerals refer to likefeatures in FIGS. 4A, 4B and in accordance with an alternativeembodiment, a device structure 90 is similar to device structure 10 butthe types of materials in layer 41, 42 and layer 56 are exchanged. Inparticular, layer 92 is comprised of the material comprising layer 56and layers 96, 98 are comprised of the materials comprising layer 41,42. A section 95 of layers 96, 98 is positioned on the top surface 23 ofSOI layer 22 in vertical alignment with the p-n junction 36, occupiesthe gap 50 between the sections 43, 44 of layer 92, and directlycontacts the top surface 23 of the SOI layer 22. Sections 91, 93 oflayer 92 are respectively positioned on the top surface 23 of SOI layer22 in vertical alignment with the p-n junctions 34, 38.

FIG. 7 shows a block diagram of an exemplary design flow 100 used forexample, in semiconductor IC logic design, simulation, test, layout, andmanufacture. Design flow 100 includes processes, machines and/ormechanisms for processing design structures or devices to generatelogically or otherwise functionally equivalent representations of thedesign structures and/or devices described above and shown in FIGS. 4A,4B, 5 and FIG. 6. The design structures processed and/or generated bydesign flow 100 may be encoded on machine-readable transmission orstorage media to include data and/or instructions that when executed orotherwise processed on a data processing system generate a logically,structurally, mechanically, or otherwise functionally equivalentrepresentation of hardware components, circuits, devices, or systems.Machines include, but are not limited to, any machine used in an ICdesign process, such as designing, manufacturing, or simulating acircuit, component, device, or system. For example, machines mayinclude: lithography machines, machines and/or equipment for generatingmasks (e.g., e-beam writers), computers or equipment for simulatingdesign structures, any apparatus used in the manufacturing or testprocess, or any machines for programming functionally equivalentrepresentations of the design structures into any medium (e.g., amachine for programming a programmable gate array).

Design flow 100 may vary depending on the type of representation beingdesigned. For example, a design flow 100 for building an applicationspecific IC (ASIC) may differ from a design flow 100 for designing astandard component or from a design flow 100 for instantiating thedesign into a programmable array, for example a programmable gate array(PGA) or a field programmable gate array (FPGA) offered by Altera® Inc.or Xilinx® Inc.

FIG. 7 illustrates multiple such design structures including an inputdesign structure 102 that is preferably processed by a design process104. Design structure 102 may be a logical simulation design structuregenerated and processed by design process 104 to produce a logicallyequivalent functional representation of a hardware device. Designstructure 102 may also or alternatively comprise data and/or programinstructions that when processed by design process 104, generate afunctional representation of the physical structure of a hardwaredevice. Whether representing functional and/or structural designfeatures, design structure 102 may be generated using electroniccomputer-aided design (ECAD) such as implemented by a coredeveloper/designer. When encoded on a machine-readable datatransmission, gate array, or storage medium, design structure 102 may beaccessed and processed by one or more hardware and/or software moduleswithin design process 104 to simulate or otherwise functionallyrepresent an electronic component, circuit, electronic or logic module,apparatus, device, or system such as those shown in FIGS. 4A, 4B, 5 andFIG. 6. As such, design structure 102 may comprise files or other datastructures including human and/or machine-readable source code, compiledstructures, and computer-executable code structures that when processedby a design or simulation data processing system, functionally simulateor otherwise represent circuits or other levels of hardware logicdesign. Such data structures may include hardware-description language(HDL) design entities or other data structures conforming to and/orcompatible with lower-level HDL design languages such as Verilog andVHDL, and/or higher level design languages such as C or C++.

Design process 104 preferably employs and incorporates hardware and/orsoftware modules for synthesizing, translating, or otherwise processinga design/simulation functional equivalent of the components, circuits,devices, or logic structures shown in FIGS. 4A, 4B, 5 and FIG. 6 togenerate a netlist 106 which may contain design structures such asdesign structure 102. Netlist 106 may comprise, for example, compiled orotherwise processed data structures representing a list of wires,discrete components, logic gates, control circuits, I/O devices, models,etc. that describes the connections to other elements and circuits in anintegrated circuit design. Netlist 106 may be synthesized using aniterative process in which netlist 106 is resynthesized one or moretimes depending on design specifications and parameters for the device.As with other design structure types described herein, netlist 106 maybe recorded on a machine-readable data storage medium or programmed intoa programmable gate array. The medium may be a non-volatile storagemedium such as a magnetic or optical disk drive, a programmable gatearray, a compact flash, or other flash memory. Additionally, or in thealternative, the medium may be a system or cache memory, buffer space,or electrically or optically conductive devices and materials on whichdata packets may be transmitted and intermediately stored via theInternet, or other networking suitable means.

Design process 104 may include hardware and software modules forprocessing a variety of input data structure types including Netlist106. Such data structure types may reside, for example, within libraryelements 108 and include a set of commonly used elements, circuits, anddevices, including models, layouts, and symbolic representations, for agiven manufacturing technology (e.g., different technology nodes, 32 nm,45 nm, 90 nm, etc.). The data structure types may further include designspecifications 110, characterization data 112, verification data 114,design rules 116, and test data files 118 which may include input testpatterns, output test results, and other testing information. Designprocess 104 may further include, for example, standard mechanical designprocesses such as stress analysis, thermal analysis, mechanical eventsimulation, process simulation for operations such as casting, molding,and die press forming, etc. One of ordinary skill in the art ofmechanical design can appreciate the extent of possible mechanicaldesign tools and applications used in design process 104 withoutdeviating from the scope and spirit of the invention. Design process 104may also include modules for performing standard circuit designprocesses such as timing analysis, verification, design rule checking,place and route operations, etc.

Design process 104 employs and incorporates logic and physical designtools such as HDL compilers and simulation model build tools to processdesign structure 102 together with some or all of the depictedsupporting data structures along with any additional mechanical designor data (if applicable), to generate a second design structure 120.Design structure 120 resides on a storage medium or programmable gatearray in a data format used for the exchange of data of mechanicaldevices and structures (e.g., information stored in an IGES, DXF,Parasolid XT, JT, DRG, or any other suitable format for storing orrendering such mechanical design structures). Similar to designstructure 102, design structure 120 preferably comprises one or morefiles, data structures, or other computer-encoded data or instructionsthat reside on transmission or data storage media and that whenprocessed by an ECAD system generate a logically or otherwisefunctionally equivalent form of one or more of the embodiments of theinvention shown in FIGS. 4A, 4B, 5 and FIG. 6. In one embodiment, designstructure 120 may comprise a compiled, executable HDL simulation modelthat functionally simulates the devices shown in FIGS. 4A, 4B, 5 andFIG. 6.

Design structure 120 may also employ a data format used for the exchangeof layout data of integrated circuits and/or symbolic data format (e.g.information stored in a GDSII (GDS2), GL1, OASIS, map files, or anyother suitable format for storing such design data structures). Designstructure 120 may comprise information such as, for example, symbolicdata, map files, test data files, design content files, manufacturingdata, layout parameters, wires, levels of metal, vias, shapes, data forrouting through the manufacturing line, and any other data required by amanufacturer or other designer/developer to produce a device orstructure as described above and shown in FIGS. 4A, 4B, 5 and FIG. 6.Design structure 120 may then proceed to a stage 122 where, for example,design structure 120: proceeds to tape-out, is released tomanufacturing, is released to a mask house, is sent to another designhouse, is sent back to the customer, etc.

The method as described above is used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case, the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It will be understood that when an element is described as being“connected” or “coupled” to or with another element, it can be directlyconnected or coupled to the other element or, instead, one or moreintervening elements may be present. In contrast, when an element isdescribed as being “directly connected” or “directly coupled” to anotherelement, there are no intervening elements present. When an element isdescribed as being “indirectly connected” or “indirectly coupled” toanother element, there is at least one intervening element present.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein.

1. A device structure formed using a device region of semiconductormaterial, the device structure comprising: a silicon controlledrectifier including a first p-n junction and a second p-n junction eachin the device region; a first layer on a top surface of the deviceregion, the first layer laterally positioned on the top surface of thedevice region in vertical alignment with the first p-n junction; and asecond layer on the top surface of the device region, the second layerlaterally positioned on the top surface of the device region in verticalalignment with the second p-n junction, wherein the first layer iscomprised of a first material and the second layer is comprised of asecond material with a higher electrical resistivity than the firstmaterial.
 2. The device structure of claim 1 wherein the siliconcontrolled rectifier comprises a plurality of doped regions having alateral arrangement in the device region and defining the first andsecond p-n junctions, and further comprising: asemiconductor-on-insulator substrate that includes a handle wafer, asemiconductor layer comprising the device region, and a burieddielectric layer separating the handle wafer from the semiconductorlayer.
 3. The device structure of claim 1 wherein the silicon controlledrectifier comprises a first well and a second well each in the deviceregion, the first well has a first conductivity type, the second wellhas a second conductivity type opposite to the first conductivity type,and the second p-n junction is defined between the first well and thesecond well.
 4. The device structure of claim 3 wherein the siliconcontrolled rectifier further comprises an anode in the device region,the anode has the second conductivity type, and the anode and the firstp-n junction is defined between the anode and the first well.
 5. Thedevice structure of claim 3 wherein the silicon controlled rectifierfurther comprises a cathode in the device region, the cathode has thefirst conductivity type, and the first p-n junction is defined betweenthe cathode and the second well.
 6. The device structure of claim 1wherein the silicon controlled rectifier comprises a first well and ananode each in the device region, the first well has a first conductivitytype, the anode has a second conductivity type opposite to the firstconductivity type and, the second p-n junction is defined between anodeand the first well.
 7. The device structure of claim 6 wherein thesilicon controlled rectifier comprises a second well in the deviceregion, the second well has the second conductivity type, and the firstp-n junction is defined between the first well and the second well. 8.The device structure of claim 1 wherein the silicon controlled rectifiercomprises a first well, a second well, and a cathode each in the deviceregion, the first well and the cathode have a first conductivity type,the second well has a second conductivity type opposite to the firstconductivity type, and the second p-n junction is defined between thecathode and the second well.
 9. The device structure of claim 7 whereinthe first p-n junction is defined between the first well and the secondwell.
 10. The device structure of claim 1 further comprising: a thirdlayer comprised of an electrical insulator and positioned between thefirst layer and the top surface of the device region.
 11. Anelectrostatic discharge protection circuit comprising: the devicestructure of claim 1; a protected circuit; a ground pad; and aninput/output pad, wherein the silicon controlled rectifier includes ananode and a cathode coupled with the ground pad, the anode coupled withof the input/output pad and with the protected circuit.
 12. A method offabricating a device structure that includes a silicon controlledrectifier formed in a device region, the method comprising: forming asection of a first layer on a top surface of the device region andlaterally positioned on the top surface in vertical alignment with afirst p-n junction of the silicon controlled rectifier; and forming asection of a second layer on the top surface of the device region andlaterally positioned on the top surface in vertical alignment with asecond p-n junction of the silicon controlled rectifier, wherein thefirst layer is comprised of a first material and the second layer iscomprised of a second material with a higher electrical resistivity thanthe first material.
 13. The method of claim 12 wherein the device regionis contained in a semiconductor layer of a silicon-on-insulatorsubstrate, and further comprising: forming a plurality of doped regionshaving opposite conductivity types in the semiconductor layer andlaterally arranged to form the silicon controlled rectifier.
 14. Themethod of claim 12 wherein the first material is comprised of anelectrical conductor, and further comprising: depositing the first layeron the top surface of the device region; and patterning the first layerto form the section of the first layer.
 15. The method of claim 14wherein the second material is comprised of an electrical insulator, andfurther comprising: depositing the second layer on the top surface ofthe device region and on the section of the first layer; and patterningthe second layer to form the section of the second layer.
 16. The methodof claim 12 further comprising: forming a first well having a firstconductivity type in the device region; and forming a second well havinga second conductivity type opposite to the first conductivity type inthe device region, wherein the second p-n junction is defined betweenthe first well and the second well.
 17. The method of claim 16 furthercomprising: forming an anode having the second conductivity type in thedevice region; forming a cathode having the first conductivity type inthe device region and laterally separated from the anode by the firstwell and the second well, wherein the first p-n junction is definedbetween the anode and the first well or between the cathode and thesecond well.
 18. The method of claim 12 further comprising: forming afirst well having a first conductivity type in the device region; andforming an anode having a second conductivity type opposite to the firstconductivity type and laterally arranged relative to the first well sothat the second p-n junction is defined between the first well and theanode.
 19. The method of claim 18 further comprising: forming a secondwell having the second conductivity type and laterally arranged relativeto the first well so that the first p-n junction is defined between thefirst well and the second well.
 20. The method of claim 12 furthercomprising: forming a first well having a first conductivity type in thedevice region; forming a second well having a second conductivity typeopposite to the first conductivity type in the device region; andforming a cathode having the first conductivity type in the deviceregion and laterally arranged relative to the second well so that thesecond p-n junction is defined between the cathode and the second well.21. The method of claim 20 wherein the first p-n junction is definedbetween the first well and the second well.
 22. A design structurereadable by a machine used in design, manufacture, or simulation of anintegrated circuit, the design structure comprising: a siliconcontrolled rectifier including a first p-n junction and a second p-njunction each in a device region; a first layer on a top surface of thedevice region, the first layer laterally positioned on the top surfaceof the device region in vertical alignment with the first p-n junction;and a second layer on the top surface of the device region, the secondlayer laterally positioned on the top surface of the device region invertical alignment with the second p-n junction, wherein the first layeris comprised of a first material and the second layer is comprised of asecond material with a higher electrical resistivity than the firstmaterial.
 23. The design structure of claim 22 wherein the designstructure comprises a netlist.
 24. The design structure of claim 22wherein the design structure resides on storage medium as a data formatused for the exchange of layout data of integrated circuits.
 25. Thedesign structure of claim 22 wherein the design structure resides in aprogrammable gate array.